NSVBC114EPDXV6T1G

Teknik Özellikler

Lifecycle Status

ACTIVE (Last Updated: 2 weeks ago)

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Number Of Elements

2

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

6

Ambalaj

Tape & Reel (TR)

Max Collector Current

100mA

Polaritychannel Type

NPN AND PNP

Current Collector Cutoff Max

500nA

Jesd30 Code

R-PDSO-F6

Montaj

Surface Mount

JESD-609 Kodu

e3

Kurşunsuz Kodu

yes

Reference Standard

AEC-Q101

Dc Current Gain Hfe Min Ic Vce

35 @ 5mA 10V

Kılıf / Paket

SOT-563, SOT-666

Vce Saturation Max Ib Ic

250mV @ 300μA, 10mA

Max Power Dissipation

500mW

Power Max

500mW

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Collectoremitter Breakdown Voltage

50V

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

2 Weeks

Transistor Application

SWITCHING

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2012

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Formu

FLAT

Parça Durumu

Active

Resistor Emitter Base R2

10k Ω

Nem Hassasiyeti (MSL)

1 (Unlimited)

Collector Emitter Voltage Vceo

250mV

Resistor Base R1

10k Ω

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON