NSBC124XPDXV6T5G

Teknik Özellikler

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Polaritychannel Type

NPN AND PNP

Akım Değeri

100mA

Resistor Base R1

22k Ω

Collector Emitter Voltage Vceo

250mV

Montaj

Surface Mount

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Max Collector Current

100mA

Kurşunsuz

Lead Free

Max Power Dissipation

500mW

Dc Current Gain Hfe Min Ic Vce

80 @ 5mA 10V

Yayın Yılı

2008

RoHS Durumu

RoHS Compliant

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Obsolete

Ambalaj

Tape & Reel (TR)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Additional Feature

BUILT IN BIAS RESISTOR RATIO IS 2.14

Kılıf / Paket

SOT-563, SOT-666

ECCN Kodu

EAR99

Current Collector Cutoff Max

500nA

Resistor Emitter Base R2

47k Ω

Operating Temperature Max

150°C

Collectoremitter Breakdown Voltage

50V

Terminal Sayısı

6

Terminal Kaplaması

Tin (Sn)

Voltage Rated Dc

50V

Number Of Elements

2

Transistor Application

SWITCHING

Jesd30 Code

R-PDSO-F6

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Temel Parça No

NSBC1*

Pin Sayısı

6

Terminal Formu

FLAT

Vce Saturation Max Ib Ic

250mV @ 1mA, 10mA