NDS9953A

Teknik Özellikler

Montaj

Surface Mount

Number Of Elements

2

Voltage Rated Dc

-30V

Max Power Dissipation

900mW

Nominal Vgs

-1.6 V

Terminal

SMD/SMT

Gate Charge Qg Max Vgs

25nC @ 10V

Power Dissipation

2W

Rise Time

21ns

Ürün Durumu

Obsolete

Kurşunsuz

Lead Free

Parça Durumu

Obsolete

Drain To Source Voltage Vdss

30V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current Id

2.9A

Gate To Source Voltage Vgs

20V

Fall Time Typ

8 ns

Threshold Voltage

-1.6V

Drain To Source Breakdown Voltage

-30V

Akım Değeri

-2.9A

Yayın Yılı

1998

Fet Type

2 P-Channel (Dual)

Element Configuration

Dual

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Feature

Logic Level Gate

Çalışma Sıcaklığı

-55°C~150°C TJ

Dual Supply Voltage

-30V

Rds On Max Id Vgs

130m Ω @ 1A, 10V

Tedarikçi Cihaz Paketi

8-SOIC

Genişlik

4.05mm

Power Max

900mW

Vgsth Max Id

2.8V @ 250μA

Paket

Bulk

Pin Sayısı

8

Current Continuous Drain Id25

2.9A

Input Capacitance Ciss Max Vds

350pF @ 10V

Row Spacing

6.3 mm

Turn Off Delay Time

21 ns

Reach Svhc

No SVHC