MVDF1N05ER2G

Teknik Özellikler

JESD-609 Kodu

e3

Pin Sayısı

8

Max Power Dissipation

2W

Continuous Drain Current Id

2A

Terminal Formu

GULL WING

Rds On Max Id Vgs

300m Ω @ 1.5A, 10V

Avalanche Energy Rating Eas

300 mJ

Yayın Yılı

2012

Additional Feature

LOGIC LEVEL COMPATIBLE, ULTRA LOW ON RESISTANCE

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

RoHS Durumu

RoHS Compliant

Terminal Kaplaması

Tin (Sn)

Drainsource On Resistancemax

0.3Ohm

Fet Feature

Logic Level Gate

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

12.5nC @ 10V

Element Configuration

Dual

Yüzey Montaj

YES

Drain To Source Voltage Vdss

50V

Drain Currentmax Abs Id

2A

Pulsed Drain Currentmax Idm

10A

Vgsth Max Id

3V @ 250μA

Ambalaj

Tape & Reel (TR)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Parça Durumu

Obsolete

ECCN Kodu

EAR99

Terminal Sayısı

8

Input Capacitance Ciss Max Vds

330pF @ 25V

Operating Mode

ENHANCEMENT MODE

Fet Type

2 N-Channel (Dual)

Ds Breakdown Voltagemin

50V

Number Of Elements

2

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ