MPSA29-D26Z

Teknik Özellikler

Terminal Pozisyonu

BOTTOM

Transistor Element Material

SILICON

Max Power Dissipation

625mW

Collectoremitter Saturation Voltage

1.2V

Montaj

Through Hole

Frequency Transition

125MHz

Collector Base Voltage Vcbo

100V

Hfemin

10000

Polarity

NPN

Çalışma Sıcaklığı

-55°C~150°C TJ

Current Collector Cutoff Max

500nA

Collector Emitter Voltage Vceo

100V

RoHS Durumu

ROHS3 Compliant

Lifecycle Status

ACTIVE (Last Updated: 23 hours ago)

Transition Frequency

125MHz

Pin Sayısı

3

Qualification Status

Not Qualified

Ambalaj

Tape & Reel (TR)

Temel Parça No

MPSA29

Transistor Type

NPN - Darlington

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Number Of Elements

1

Element Configuration

Single

Dc Current Gain Hfe Min Ic Vce

10000 @ 100mA 5V

Montaj Tipi

Through Hole

Kurşunsuz

Lead Free

Terminal Sayısı

3

Vce Saturation Max Ib Ic

1.5V @ 100μA, 100mA

Parça Durumu

Active

Power Max

625mW

ECCN Kodu

EAR99

Weight

201mg

Collectoremitter Breakdown Voltage

100V

Max Collector Current

800mA

Max Breakdown Voltage

100V

Transistor Application

AMPLIFIER

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2007

Emitter Base Voltage Vebo

12V

Fabrika Tedarik Süresi

10 Weeks