MMDF2N02ER2G

Teknik Özellikler

Additional Feature

LOGIC LEVEL COMPATIBLE

Drainsource On Resistancemax

0.1Ohm

Fall Time Typ

18 ns

Montaj

Surface Mount

Montaj Tipi

Surface Mount

Tepe Reflow Sıcaklığı (°C)

260

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Power Dissipation

2W

Transistor Element Material

SILICON

RoHS Durumu

RoHS Compliant

Vgsth Max Id

3V @ 250μA

Terminal Formu

GULL WING

Pin Sayısı

8

Terminal Sayısı

8

Rise Time

17ns

Qualification Status

Not Qualified

Parça Durumu

Obsolete

Kurşunsuz Kodu

yes

Kurşunsuz

Lead Free

Fet Type

2 N-Channel (Dual)

Lifecycle Status

OBSOLETE (Last Updated: 1 week ago)

Akım Değeri

2A

Avalanche Energy Rating Eas

245 mJ

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-609 Kodu

e3

Turn Off Delay Time

27 ns

Gate Charge Qg Max Vgs

30nC @ 10V

Voltage Rated Dc

25V

Yayın Yılı

2006

Tepe Reflow Süresi (maks. sn)

40

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

532pF @ 16V

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Max Power Dissipation

2W

Fet Feature

Logic Level Gate

Drain To Source Breakdown Voltage

25V

Number Of Elements

2