MMDF2N02ER2

Teknik Özellikler

Max Power Dissipation

2W

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Number Of Elements

2

Drain To Source Breakdown Voltage

25V

Fet Feature

Logic Level Gate

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pin Sayısı

8

REACH Uyumluluk Kodu

not_compliant

Continuous Drain Current Id

3.6A

Gate To Source Voltage Vgs

20V

Rds On Max Id Vgs

100m Ω @ 2.2A, 10V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Avalanche Energy Rating Eas

245 mJ

Akım Değeri

2A

Gate Charge Qg Max Vgs

30nC @ 10V

JESD-609 Kodu

e0

Turn Off Delay Time

27 ns

ECCN Kodu

EAR99

Yayın Yılı

2006

Tepe Reflow Süresi (maks. sn)

30

Voltage Rated Dc

25V

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

532pF @ 16V

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

Non-RoHS Compliant

Transistor Element Material

SILICON

Terminal Sayısı

8

Pin Sayısı

8

Terminal Formu

GULL WING

Vgsth Max Id

3V @ 250μA

Kurşunsuz

Contains Lead

Kurşunsuz Kodu

no

Parça Durumu

Obsolete

Qualification Status

Not Qualified

Rise Time

17ns

Lifecycle Status

OBSOLETE (Last Updated: 2 weeks ago)

Fet Type

2 N-Channel (Dual)

Additional Feature

LOGIC LEVEL COMPATIBLE

Montaj

Surface Mount