MMDF2C03HDR2

Teknik Özellikler

Kurşunsuz

Contains Lead

Rise Time

18ns

Qualification Status

Not Qualified

Parça Durumu

Obsolete

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Pin Sayısı

8

Terminal Sayısı

8

Terminal Formu

GULL WING

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Power Dissipation

2W

Montaj

Surface Mount

Pin Sayısı

8

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

3A

Rds On Max Id Vgs

70m Ω @ 3A, 10V

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Fet Feature

Logic Level Gate

Current Continuous Drain Id25

4.1A 3A

Number Of Elements

2

Tepe Reflow Süresi (maks. sn)

30

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Avalanche Energy Rating Eas

324 mJ

JESD-609 Kodu

e0

Fet Type

N and P-Channel

RoHS Durumu

Non-RoHS Compliant

Transistor Element Material

SILICON

Vgsth Max Id

3V @ 250μA

Tepe Reflow Sıcaklığı (°C)

240

Temel Parça No

MMDF2C03HD

Fall Time Typ

194 ns

Drainsource On Resistancemax

0.07Ohm

REACH Uyumluluk Kodu

not_compliant

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Max Power Dissipation

2W