MMDF1N05ER2G

Teknik Özellikler

Akım Değeri

1A

Uzunluk

5mm

Pulsed Drain Currentmax Idm

10A

Turn Off Delay Time

40 ns

Gate Charge Qg Max Vgs

12.5nC @ 10V

Drain Currentmax Abs Id

2A

Voltage Rated Dc

50V

Yayın Yılı

2006

Input Capacitance Ciss Max Vds

330pF @ 25V

Max Power Dissipation

2W

Drain To Source Breakdown Voltage

50V

Operating Mode

ENHANCEMENT MODE

Threshold Voltage

3V

Terminal Kaplaması

Tin (Sn)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Yüzey Montaj

YES

Additional Feature

LOGIC LEVEL COMPATIBLE

Direnç

300MOhm

Fall Time Typ

25 ns

Temel Parça No

MMDF1N05E

Tepe Reflow Sıcaklığı (°C)

260

Genişlik

4mm

Transistor Element Material

SILICON

RoHS Durumu

RoHS Compliant

Vgsth Max Id

3V @ 250μA

Kurşunsuz Kodu

yes

Lifecycle Status

OBSOLETE (Last Updated: 1 day ago)

Fet Type

2 N-Channel (Dual)

Avalanche Energy Rating Eas

300 mJ

JESD-609 Kodu

e3

Tepe Reflow Süresi (maks. sn)

40

Turn On Delay Time

20 ns

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Reach Svhc

No SVHC

Fet Feature

Logic Level Gate

Number Of Elements

2

Gate To Source Voltage Vgs

20V