Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Max Power Dissipation
- 350mW
- Montaj Tipi
- Surface Mount
- Collectoremitter Breakdown Voltage
- 45V
- Collector Emitter Voltage Vceo
- 45V
- Parça Durumu
- Obsolete
- Transistor Element Material
- SILICON
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Fabrika Tedarik Süresi
- 39 Weeks
- ECCN Kodu
- EAR99
- Kurşunsuz
- Lead Free
- Genişlik
- 1.3mm
- Collector Base Voltage Vcbo
- -60V
- Temel Parça No
- MMBT200
- Transistor Type
- PNP
- Current Collector Cutoff Max
- 50nA
- Radyasyon Dayanımı
- No
- Max Breakdown Voltage
- 45V
- Hfemin
- 100
- Polaritychannel Type
- PNP
- Transistor Application
- AMPLIFIER
- Ambalaj
- Tape & Reel (TR)
- Number Of Elements
- 1
- Terminal Pozisyonu
- DUAL
- Max Collector Current
- 500mA
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Element Configuration
- Single
- Yükseklik
- 930μm
- Transition Frequency
- 250MHz
- Uzunluk
- 2.92mm
- Gain Bandwidth Product
- 250MHz
- Collectoremitter Saturation Voltage
- -200mV
- Power Dissipation
- 350mW
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 150mA 5V
- Vce Saturation Max Ib Ic
- 400mV @ 20mA, 200mA
- Frekans
- 250MHz
- Pin Sayısı
- 3
- Montaj
- Surface Mount
- Kurşunsuz Kodu
- yes
- Akım Değeri
- -500mA
- Emitter Base Voltage Vebo
- -6V
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