MJD45H11TF

Teknik Özellikler

Kurşunsuz

Lead Free

Number Of Elements

1

Max Power Dissipation

20W

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Parça Durumu

Obsolete

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2010

Frekans

40MHz

Vce Saturation Max Ib Ic

1V @ 400mA, 8A

Contact Plating

Tin

Jesd30 Code

R-PSSO-G2

Max Breakdown Voltage

80V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Gain Bandwidth Product

40MHz

Transistor Type

PNP

Polaritychannel Type

PNP

Emitter Base Voltage Vebo

-5V

Uzunluk

6.6mm

Lifecycle Status

LAST SHIPMENTS (Last Updated: 6 days ago)

Reach Svhc

No SVHC

Hfemin

60

Collectoremitter Saturation Voltage

-1V

Temel Parça No

MJD45H11

Collector Base Voltage Vcbo

-80V

Collector Emitter Voltage Vceo

80V

Element Configuration

Single

Voltage Rated Dc

-80V

Weight

260.37mg

Dc Current Gain Hfe Min Ic Vce

40 @ 4A 1V

Montaj

Surface Mount

Terminal Sayısı

2

Yükseklik

2.3mm

Çalışma Sıcaklığı

150°C TJ

Max Collector Current

8A

Genişlik

6.1mm

Power Dissipation

1.75W

Kurşunsuz Kodu

yes

JESD-609 Kodu

e3