Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Emitter Base Voltage Vebo
- 5V
- Polaritychannel Type
- NPN
- Transistor Type
- NPN
- Gain Bandwidth Product
- 3MHz
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Uzunluk
- 6.6mm
- Max Breakdown Voltage
- 100V
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Jesd30 Code
- R-PSSO-G2
- Frekans
- 3MHz
- Montaj Tipi
- Surface Mount
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2001
- Vce Saturation Max Ib Ic
- 1.5V @ 600mA, 6A
- Transistor Application
- AMPLIFIER
- Ambalaj
- Tape & Reel (TR)
- Parça Durumu
- Obsolete
- Kurşunsuz
- Lead Free
- Max Power Dissipation
- 1.75W
- Number Of Elements
- 1
- Radyasyon Dayanımı
- No
- RoHS Durumu
- RoHS Compliant
- Terminal Kaplaması
- Tin (Sn)
- Pin Sayısı
- 3
- Current Collector Cutoff Max
- 10μA
- Akım Değeri
- 6A
- Transition Frequency
- 3MHz
- Collectoremitter Breakdown Voltage
- 100V
- Terminal Formu
- GULL WING
- ECCN Kodu
- EAR99
- Genişlik
- 6.1mm
- Power Dissipation
- 1.75W
- Max Collector Current
- 6A
- JESD-609 Kodu
- e3
- Transistor Element Material
- SILICON
- Kurşunsuz Kodu
- yes
- Voltage Rated Dc
- 100V
- Element Configuration
- Single
- Collector Emitter Voltage Vceo
- 100V
- Dc Current Gain Hfe Min Ic Vce
- 15 @ 3A 4V
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