MJD31C1

Teknik Özellikler

Transistor Element Material

SILICON

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

JESD-609 Kodu

e0

HTS Kodu

8541.29.00.95

Pin Sayısı

3

Max Collector Current

3A

Current Collector Cutoff Max

50μA

Qualification Status

Not Qualified

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Pin Sayısı

3

Transition Frequency

3MHz

Collectoremitter Breakdown Voltage

100V

ECCN Kodu

EAR99

Akım Değeri

3A

Transistor Type

NPN

Emitter Base Voltage Vebo

5V

Polaritychannel Type

NPN

Gain Bandwidth Product

3MHz

RoHS Durumu

Non-RoHS Compliant

Case Connection

COLLECTOR

Collectoremitter Saturation Voltage

1.2V

Ambalaj

Tube

Parça Durumu

Obsolete

Transistor Application

AMPLIFIER

Hfemin

25

Number Of Elements

1

Max Power Dissipation

1.56W

Kurşunsuz

Contains Lead

Çalışma Sıcaklığı

-65°C~150°C TJ

Vce Saturation Max Ib Ic

1.2V @ 375mA, 3A

Tepe Reflow Sıcaklığı (°C)

240

Terminal Sayısı

3

Montaj

Through Hole

Tepe Reflow Süresi (maks. sn)

30

REACH Uyumluluk Kodu

not_compliant

Dc Current Gain Hfe Min Ic Vce

10 @ 3A 4V

Voltage Rated Dc

100V

Collector Emitter Voltage Vceo

1.2V

Element Configuration

Single

Collector Base Voltage Vcbo

100V