Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Number Of Elements
- 1
- Max Power Dissipation
- 1.75W
- Kurşunsuz
- Lead Free
- Ambalaj
- Tape & Reel (TR)
- Parça Durumu
- Obsolete
- Transistor Application
- AMPLIFIER
- Yayın Yılı
- 2001
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Surface Mount
- Frekans
- 2MHz
- Vce Saturation Max Ib Ic
- 8V @ 3.3A, 10A
- Jesd30 Code
- R-PSSO-G2
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Breakdown Voltage
- 60V
- Gain Bandwidth Product
- 2MHz
- Transistor Type
- NPN
- Polaritychannel Type
- NPN
- Emitter Base Voltage Vebo
- 5V
- Uzunluk
- 6.6mm
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Reach Svhc
- No SVHC
- Collectoremitter Saturation Voltage
- 1.1V
- Hfemin
- 20
- Fabrika Tedarik Süresi
- 14 Weeks
- Collector Base Voltage Vcbo
- 70V
- Temel Parça No
- MJD3055
- Weight
- 260.37mg
- Dc Current Gain Hfe Min Ic Vce
- 20 @ 4A 4V
- Element Configuration
- Single
- Collector Emitter Voltage Vceo
- 60V
- Voltage Rated Dc
- 60V
- Montaj
- Surface Mount
- Terminal Sayısı
- 2
- Çalışma Sıcaklığı
- 150°C TJ
- Yükseklik
- 2.3mm
- Max Collector Current
- 10A
- Power Dissipation
- 1.75W
- Genişlik
- 6.1mm
- Kurşunsuz Kodu
- yes
- Transistor Element Material
- SILICON
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