MCH6663-TL-H

Teknik Özellikler

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Max Power Dissipation

800mW

Gate Charge Qg Max Vgs

2nC @ 10V

Input Capacitance Ciss Max Vds

88pF @ 10V

Continuous Drain Current Id

1.5A

Power Dissipation

800mW

Drain To Source Breakdown Voltage

30V

Yüzey Montaj

YES

Drainsource On Resistancemax

0.188Ohm

Rise Time

3.6ns

RoHS Durumu

RoHS Compliant

Fet Type

N and P-Channel

Drain Currentmax Abs Id

1.8A

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

10.5 ns

Lifecycle Status

LAST SHIPMENTS (Last Updated: 1 week ago)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fet Feature

Logic Level Gate

Kılıf / Paket

6-SMD, Flat Leads

Pin Sayısı

6

Parça Durumu

Obsolete

JESD-609 Kodu

e6

Turn On Delay Time

3.4 ns

Terminal Kaplaması

Tin/Bismuth (Sn/Bi)

Terminal Sayısı

6

Fall Time Typ

4 ns

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Halogen Free

Halogen Free

Radyasyon Dayanımı

No

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Number Of Elements

2

Pin Sayısı

6

Kurşunsuz

Lead Free

Yayın Yılı

2012

Montaj Tipi

Surface Mount

Element Configuration

Dual

Nem Hassasiyeti (MSL)

1 (Unlimited)