MBR2045MFST1G

Teknik Özellikler

Yayın Yılı

2012

Nem Hassasiyeti (MSL)

1 (Unlimited)

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Fabrika Tedarik Süresi

7 Weeks

Case Connection

CATHODE

Min. Çalışma Sıcaklığı

-55°C

Jesd30 Code

R-PDSO-F5

Diode Element Material

SILICON

Maks. Çalışma Sıcaklığı

150°C

Max Reverse Voltage Dc

45V

Number Of Elements

1

Element Configuration

Single

JESD-609 Kodu

e3

Kılıf / Paket

8-PowerTDFN, 5 Leads

Terminal Formu

FLAT

ECCN Kodu

EAR99

Terminal Kaplaması

Tin (Sn)

Average Rectified Current

20A

Parça Durumu

Active

Terminal Sayısı

5

Montaj Tipi

Surface Mount

RoHS Durumu

ROHS3 Compliant

Kurşunsuz Kodu

yes

Number Of Phases

1

Peak Nonrepetitive Surge Current

400A

Current Reverse Leakage Vr

600μA @ 45V

Max Repetitive Reverse Voltage Vrrm

45V

Ambalaj

Tape & Reel (TR)

Additional Feature

FREE WHEELING DIODE, LOW POWER LOSS

Voltage Forward Vf Max If

610mV @ 30A

Applications

EFFICIENCY

REACH Uyumluluk Kodu

not_compliant

Operating Temperature Junction

-55°C~150°C

Peak Reverse Current

600μA

Terminal Pozisyonu

DUAL

Diode Type

Schottky

Montaj

Surface Mount

Forward Voltage

610mV