Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Through Hole
- ECCN Kodu
- EAR99
- Element Configuration
- Single
- Kurşunsuz Kodu
- yes
- Max Collector Current
- 500mA
- Gain Bandwidth Product
- 50MHz
- Transition Frequency
- 50MHz
- Emitter Base Voltage Vebo
- 6V
- Fabrika Tedarik Süresi
- 2 Weeks
- Terminal Sayısı
- 3
- Vce Saturation Max Ib Ic
- 500mV @ 2mA, 20mA
- Terminal Pozisyonu
- BOTTOM
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 625mW
- Transistor Type
- NPN
- Collector Base Voltage Vcbo
- 200V
- Transistor Application
- AMPLIFIER
- Akım Değeri
- 500mA
- Number Of Elements
- 1
- Frekans
- 50MHz
- Weight
- 240mg
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Hfemin
- 40
- Collectoremitter Breakdown Voltage
- 200V
- RoHS Durumu
- ROHS3 Compliant
- Max Breakdown Voltage
- 200V
- Collector Emitter Voltage Vceo
- 200V
- Collectoremitter Saturation Voltage
- 500mV
- Montaj Tipi
- Through Hole
- Current Collector Cutoff Max
- 100nA ICBO
- Lifecycle Status
- ACTIVE (Last Updated: 18 hours ago)
- Parça Durumu
- Active
- Ambalaj
- Tape & Box (TB)
- Power Dissipation
- 625mW
- Yayın Yılı
- 2007
- Radyasyon Dayanımı
- No
- Kurşunsuz
- Lead Free
- Voltage Rated Dc
- 200V
- JESD-609 Kodu
- e3
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