Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Transition Frequency
- 4MHz
- Çalışma Sıcaklığı
- 150°C TJ
- Hfemin
- 8
- RoHS Durumu
- RoHS Compliant
- Gain Bandwidth Product
- 4MHz
- Terminal Sayısı
- 3
- Transistor Application
- SWITCHING
- Element Configuration
- Single
- Number Of Elements
- 1
- Transistor Element Material
- SILICON
- Radyasyon Dayanımı
- No
- Collectoremitter Breakdown Voltage
- 400V
- Temel Parça No
- KSE13003
- Ambalaj
- Tube
- Montaj Tipi
- Through Hole
- Max Power Dissipation
- 20W
- Frekans
- 4MHz
- Parça Durumu
- Obsolete
- Max Collector Current
- 1.5A
- Weight
- 761mg
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Type
- NPN
- Emitter Base Voltage Vebo
- 9V
- Dc Current Gain Hfe Min Ic Vce
- 19 @ 500mA 2V
- Polaritychannel Type
- NPN
- Power Dissipation
- 20W
- Kurşunsuz Kodu
- yes
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-225AA, TO-126-3
- Montaj
- Through Hole
- Vce Saturation Max Ib Ic
- 3V @ 500mA, 1.5A
- Collector Base Voltage Vcbo
- 700V
- Collector Emitter Voltage Vceo
- 400V
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