Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Voltage Rated Dc
- 30V
- Power Dissipation
- 1W
- Hfemin
- 60
- Vce Saturation Max Ib Ic
- 500mV @ 200mA, 2A
- Dc Current Gain Hfe Min Ic Vce
- 160 @ 1A 2V
- Collector Base Voltage Vcbo
- 40V
- Akım Değeri
- 3A
- Collector Emitter Voltage Vceo
- 30V
- Number Of Elements
- 1
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Polaritychannel Type
- NPN
- RoHS Durumu
- ROHS3 Compliant
- Ambalaj
- Bulk
- Weight
- 761mg
- Kurşunsuz
- Lead Free
- Terminal Sayısı
- 3
- Current Collector Cutoff Max
- 1μA ICBO
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gain Bandwidth Product
- 90MHz
- Kurşunsuz Kodu
- yes
- Radyasyon Dayanımı
- No
- Frekans
- 90MHz
- Transistor Application
- AMPLIFIER
- Max Power Dissipation
- 1W
- Transistor Element Material
- SILICON
- Max Collector Current
- 3A
- Collectoremitter Breakdown Voltage
- 30V
- Emitter Base Voltage Vebo
- 5V
- Yayın Yılı
- 2005
- Montaj
- Through Hole
- Kılıf / Paket
- TO-225AA, TO-126-3
- Transistor Type
- NPN
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 2 Weeks
- Element Configuration
- Single
- JESD-609 Kodu
- e3
- Collectoremitter Saturation Voltage
- 300mV
- Case Connection
- ISOLATED
- Transition Frequency
- 90MHz
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
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