Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Max Power Dissipation
- 400mW
- Transistor Element Material
- SILICON
- Max Collector Current
- 200mA
- Emitter Base Voltage Vebo
- 5V
- Collectoremitter Breakdown Voltage
- 45V
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Montaj
- Through Hole
- Yayın Yılı
- 2007
- Transistor Type
- NPN
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 8 Weeks
- Element Configuration
- Single
- Collectoremitter Saturation Voltage
- 150mV
- JESD-609 Kodu
- e3
- Transition Frequency
- 200MHz
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Parça Durumu
- Obsolete
- Montaj Tipi
- Through Hole
- Temel Parça No
- KSC815
- Terminal Kaplaması
- Tin (Sn)
- Pin Sayısı
- 3
- Voltage Rated Dc
- 45V
- Hfemin
- 40
- Power Dissipation
- 400mW
- Vce Saturation Max Ib Ic
- 400mV @ 15mA, 150mA
- Terminal Pozisyonu
- BOTTOM
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 50mA 1V
- Collector Base Voltage Vcbo
- 60V
- Akım Değeri
- 200mA
- Collector Emitter Voltage Vceo
- 45V
- Number Of Elements
- 1
- Max Breakdown Voltage
- 45V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- RoHS Durumu
- ROHS3 Compliant
- Polaritychannel Type
- NPN
- Kurşunsuz
- Lead Free
- Weight
- 240mg
- Ambalaj
- Tape & Box (TB)
- Current Collector Cutoff Max
- 100nA ICBO
- Terminal Sayısı
- 3
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