
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Collector Base Voltage Vcbo
- 1.1kV
- Transistor Type
- NPN
- Dc Current Gain Hfe Min Ic Vce
- 10 @ 600mA 5V
- Collector Emitter Voltage Vceo
- 800V
- Hfemin
- 10
- Power Dissipation
- 60W
- Max Collector Current
- 6A
- Max Power Dissipation
- 60W
- Maks. Çalışma Sıcaklığı
- 150°C
- Montaj
- Through Hole
- Kılıf / Paket
- TO-3P-3 Full Pack
- Min. Çalışma Sıcaklığı
- -55°C
- Vce Saturation Max Ib Ic
- 2V @ 600mA, 3A
- Collectoremitter Breakdown Voltage
- 800V
- Emitter Base Voltage Vebo
- 7V
- Element Configuration
- Single
- Number Of Elements
- 1
- Montaj Tipi
- Through Hole
- Parça Durumu
- Obsolete
- Ambalaj
- Tube
- Current Collector Cutoff Max
- 10μA ICBO
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- RoHS Durumu
- RoHS Compliant
İlgili Ürünler
ON Semiconductor
12A02CH-TL-E
Single BJT Transistors
ON Semiconductor
12A02MH-TL-E
Single BJT Transistors
ON Semiconductor
15C01C-TB-E
Single BJT Transistors
Stokta
Sanyo
15C01M-TL-E
Single BJT Transistors
ON Semiconductor
15C01SS-TL-E
Single BJT Transistors
ON Semiconductor
15C02CH-TL-E
Single BJT Transistors
ON Semiconductor
15C02MH-TL-E
Single BJT Transistors
Stokta
Microchip Technology
2C2222A
Single BJT Transistors

