Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Hfemin
- 10
- Power Dissipation
- 20W
- Voltage Rated Dc
- 800V
- Additional Feature
- HIGH RELIABILITY
- Vce Saturation Max Ib Ic
- 2V @ 150mA, 750mA
- Collector Base Voltage Vcbo
- 1.1kV
- Akım Değeri
- 1.5A
- Dc Current Gain Hfe Min Ic Vce
- 20 @ 100mA 5V
- Collector Emitter Voltage Vceo
- 800V
- Number Of Elements
- 1
- Kurşunsuz
- Lead Free
- Weight
- 761mg
- Ambalaj
- Bulk
- Current Collector Cutoff Max
- 10μA ICBO
- Terminal Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- RoHS Durumu
- ROHS3 Compliant
- Polaritychannel Type
- NPN
- Gain Bandwidth Product
- 15MHz
- Kurşunsuz Kodu
- yes
- Çalışma Sıcaklığı
- 150°C TJ
- Frekans
- 15MHz
- Transistor Application
- SWITCHING
- Radyasyon Dayanımı
- No
- Transistor Element Material
- SILICON
- Max Collector Current
- 1.5A
- Max Power Dissipation
- 20W
- Kılıf / Paket
- TO-225AA, TO-126-3
- Montaj
- Through Hole
- Yayın Yılı
- 2006
- Emitter Base Voltage Vebo
- 7V
- Collectoremitter Breakdown Voltage
- 800V
- Transistor Type
- NPN
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 7 Weeks
- Transition Frequency
- 15MHz
- Collectoremitter Saturation Voltage
- 2V
- JESD-609 Kodu
- e3
- Element Configuration
- Single
- Parça Durumu
- Active
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