Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Transistor Element Material
- SILICON
- Max Collector Current
- 50mA
- Max Power Dissipation
- 300mW
- Yayın Yılı
- 2007
- Montaj
- Through Hole
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collectoremitter Breakdown Voltage
- 25V
- Emitter Base Voltage Vebo
- 4V
- Transistor Type
- NPN
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 6 Weeks
- Transition Frequency
- 300MHz
- Element Configuration
- Single
- JESD-609 Kodu
- e3
- Collectoremitter Saturation Voltage
- 200mV
- Temel Parça No
- KSC388
- Montaj Tipi
- Through Hole
- Parça Durumu
- Obsolete
- Lifecycle Status
- LIFETIME (Last Updated: 6 days ago)
- Terminal Kaplaması
- Tin (Sn)
- Pin Sayısı
- 3
- Power Dissipation
- 300mW
- Hfemin
- 20
- Voltage Rated Dc
- 25V
- Vce Saturation Max Ib Ic
- 200mV @ 1.5mA, 15mA
- Terminal Pozisyonu
- BOTTOM
- Collector Base Voltage Vcbo
- 30V
- Akım Değeri
- 50mA
- Dc Current Gain Hfe Min Ic Vce
- 20 @ 12.5mA 12.5V
- Collector Emitter Voltage Vceo
- 25V
- Max Breakdown Voltage
- 25V
- Number Of Elements
- 1
- Kurşunsuz
- Lead Free
- Ambalaj
- Tape & Box (TB)
- Weight
- 240mg
- Terminal Sayısı
- 3
- Current Collector Cutoff Max
- 100nA ICBO
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Polaritychannel Type
- NPN
- RoHS Durumu
- ROHS3 Compliant
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