HUFA76413DK8T-F085

Teknik Özellikler

Terminal Sayısı

8

Additional Feature

ULTRA-LOW RESISTANCE

Jesd30 Code

R-PDSO-G8

Tepe Reflow Süresi (maks. sn)

30

Tepe Reflow Sıcaklığı (°C)

260

Ambalaj

Tape & Reel (TR)

Seri

Automotive, AEC-Q101, UltraFET™

Vgsth Max Id

3V @ 250μA

Fet Feature

Logic Level Gate

Rds On Max Id Vgs

49m Ω @ 5.1A, 10V

Transistor Application

SWITCHING

Parça Durumu

Obsolete

Gate Charge Qg Max Vgs

23nC @ 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Elements

2

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

60V

Qualification Status

Not Qualified

Avalanche Energy Rating Eas

260 mJ

Input Capacitance Ciss Max Vds

620pF @ 25V

Terminal Formu

GULL WING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

JESD-609 Kodu

e4

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Yüzey Montaj

YES

Power Max

2.5W

Operating Mode

ENHANCEMENT MODE

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Fet Type

2 N-Channel (Dual)

Ds Breakdown Voltagemin

60V

Current Continuous Drain Id25

5.1A

Kurşunsuz Kodu

yes