HUFA76413DK8T

Teknik Özellikler

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Akım Değeri

4.8A

Kurşunsuz

Lead Free

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material

SILICON

JESD-609 Kodu

e4

Montaj Tipi

Surface Mount

Qualification Status

Not Qualified

Weight

230.4mg

Input Capacitance Ciss Max Vds

620pF @ 25V

Power Dissipation

2.5W

Fall Time Typ

27 ns

Terminal Formu

GULL WING

Fet Type

2 N-Channel (Dual)

ECCN Kodu

EAR99

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Turn Off Delay Time

45 ns

Voltage Rated Dc

60V

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

5.1A

Rise Time

19ns

Tepe Reflow Süresi (maks. sn)

30

Tepe Reflow Sıcaklığı (°C)

260

Seri

UltraFET™

Ambalaj

Tape & Reel (TR)

Vgsth Max Id

3V @ 250μA

Max Power Dissipation

2.5W

Terminal Sayısı

8

Additional Feature

ULTRA-LOW RESISTANCE

Pin Sayısı

8

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Elements

2

RoHS Durumu

RoHS Compliant

Drain To Source Breakdown Voltage

60V

Gate To Source Voltage Vgs

16V

Transistor Application

SWITCHING

Rds On Max Id Vgs

49m Ω @ 5.1A, 10V

Fet Feature

Logic Level Gate