HUFA76407DK8T-F085

Teknik Özellikler

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

JESD-609 Kodu

e4

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

330pF @ 25V

Qualification Status

Not Qualified

Terminal Formu

GULL WING

Jedec95 Code

MS-012AA

Ds Breakdown Voltagemin

60V

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Fet Type

2 N-Channel (Dual)

Kurşunsuz Kodu

yes

Power Max

2.5W

Operating Mode

ENHANCEMENT MODE

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Yüzey Montaj

YES

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Vgsth Max Id

3V @ 250μA

Ambalaj

Tape & Reel (TR)

Seri

Automotive, AEC-Q101, UltraFET™

Terminal Sayısı

8

Jesd30 Code

R-PDSO-G8

Additional Feature

ULTRA-LOW RESISTANCE

Number Of Elements

2

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Voltage Vdss

60V

Fet Feature

Logic Level Gate

Transistor Application

SWITCHING

Rds On Max Id Vgs

90m Ω @ 3.8A, 10V

Gate Charge Qg Max Vgs

11.2nC @ 10V

Parça Durumu

Not For New Designs