GF1M

Teknik Özellikler

HTS Kodu

8541.10.00.80

Element Configuration

Single

Reverse Recovery Time

2 μs

Power Dissipation

1.8W

Voltage Forward Vf Max If

1.2V @ 1A

Forward Current

1A

Peak Nonrepetitive Surge Current

30A

Montaj Tipi

Surface Mount

Pin Sayısı

2

Maks. Çalışma Sıcaklığı

175°C

Terminal Sayısı

2

Weight

106mg

Peak Reverse Current

5μA

Max Repetitive Reverse Voltage Vrrm

1kV

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Forward Surge Current Ifsm

30A

Max Reverse Voltage Dc

1kV

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Operating Temperature Junction

-65°C~175°C

Ambalaj

Tape & Reel (TR)

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Yayın Yılı

2001

Reach Svhc

No SVHC

Voltage Dc Reverse Vr Max

1000V

Terminal Pozisyonu

DUAL

Genişlik

2.95mm

Kılıf / Paket

DO-214AC, SMA

Forward Voltage

1.2V

Kapasitans

15pF

JESD-609 Kodu

e3

Number Of Elements

1

Diode Type

Standard

Yükseklik

2.2mm

Terminal Kaplaması

Tin (Sn)

Capacitance Vr F

15pF @ 4V 1MHz

Diode Element Material

SILICON

Temel Parça No

GF1M

Current Reverse Leakage Vr

5μA @ 1000V