FQS4901TF

Teknik Özellikler

Reach Svhc

No SVHC

Gate To Source Voltage Vgs

25V

Fet Type

2 N-Channel (Dual)

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Kurşunsuz

Lead Free

Max Power Dissipation

2W

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

Kurşunsuz Kodu

yes

Terminal Formu

GULL WING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Parça Durumu

Active

Fall Time Typ

35 ns

Akım Değeri

450mA

RoHS Durumu

ROHS3 Compliant

Element Configuration

Dual

Radyasyon Dayanımı

No

Seri

QFET®

Turn On Delay Time

5 ns

Montaj

Surface Mount

Terminal Kaplaması

Tin (Sn)

Temel Parça No

FQS4901

Drain To Source Breakdown Voltage

400V

Fabrika Tedarik Süresi

4 Weeks

Gate Charge Qg Max Vgs

7.5nC @ 10V

Voltage Rated Dc

400V

Input Capacitance Ciss Max Vds

210pF @ 25V

Rds On Max Id Vgs

4.2 Ω @ 225mA, 10V

Drain Currentmax Abs Id

0.45A

Continuous Drain Current Id

450mA

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Fet Feature

Standard

Threshold Voltage

4V

Turn Off Delay Time

20 ns

Number Of Elements

2

Ambalaj

Tape & Reel (TR)