Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Type
- NPN
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Emitter Base Voltage Vebo
- 5V
- Terminal Sayısı
- 3
- Collector Base Voltage Vcbo
- 250V
- JESD-609 Kodu
- e3
- Weight
- 1.8g
- Kurşunsuz Kodu
- yes
- Collectoremitter Breakdown Voltage
- 250V
- Parça Durumu
- Obsolete
- Transistor Element Material
- SILICON
- Jedec95 Code
- TO-220AB
- Gain Bandwidth Product
- 30MHz
- Kurşunsuz
- Lead Free
- Fabrika Tedarik Süresi
- 6 Weeks
- Power Max
- 80W
- Ambalaj
- Tube
- Frekans
- 30MHz
- Montaj Tipi
- Through Hole
- Dc Current Gain Hfe Min Ic Vce
- 55 @ 1A 5V
- Element Configuration
- Single
- Max Collector Current
- 17A
- RoHS Durumu
- RoHS Compliant
- Yayın Yılı
- 2005
- Current Collector Cutoff Max
- 5μA ICBO
- Pin Sayısı
- 3
- Number Of Elements
- 1
- Transistor Application
- AMPLIFIER
- ECCN Kodu
- EAR99
- Montaj
- Through Hole
- Kılıf / Paket
- TO-220-3
- Max Power Dissipation
- 100W
- Hfemin
- 55
- Radyasyon Dayanımı
- No
- Vce Saturation Max Ib Ic
- 3V @ 800mA, 8A
- Polaritychannel Type
- NPN
- Terminal Kaplaması
- Tin (Sn)
- Collector Emitter Voltage Vceo
- 250V
- Power Dissipation
- 100W
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