Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Çalışma Sıcaklığı
- -50°C~150°C TJ
- Transition Frequency
- 30MHz
- Power Dissipation
- 80W
- Collector Emitter Voltage Vceo
- 3V
- Vce Saturation Max Ib Ic
- 3V @ 800mA, 8A
- Polaritychannel Type
- PNP
- Hfemin
- 55
- Max Power Dissipation
- 80W
- Kılıf / Paket
- TO-220-3
- Transistor Application
- AMPLIFIER
- Montaj
- Through Hole
- Number Of Elements
- 1
- Current Collector Cutoff Max
- 5μA ICBO
- Yayın Yılı
- 2016
- Jesd30 Code
- R-PSFM-T3
- RoHS Durumu
- RoHS Compliant
- Element Configuration
- Single
- Max Collector Current
- 15A
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 1A 5V
- Montaj Tipi
- Through Hole
- Ambalaj
- Tube
- Frekans
- 30MHz
- Kurşunsuz
- Lead Free
- Gain Bandwidth Product
- 30MHz
- Transistor Element Material
- SILICON
- Parça Durumu
- Obsolete
- Collectoremitter Breakdown Voltage
- 230V
- Kurşunsuz Kodu
- yes
- Weight
- 1.8g
- Collector Base Voltage Vcbo
- -230V
- Terminal Sayısı
- 3
- Emitter Base Voltage Vebo
- -5V
- Transistor Type
- PNP
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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