Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- RoHS Durumu
- ROHS3 Compliant
- Uzunluk
- 6.6mm
- Power Dissipation
- 1W
- Yükseklik
- 2.3mm
- Transistor Type
- NPN
- Max Power Dissipation
- 1W
- Temel Parça No
- FJD3076
- Kurşunsuz Kodu
- yes
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Montaj
- Surface Mount
- Voltage Rated Dc
- 32V
- Polaritychannel Type
- NPN
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Akım Değeri
- 2A
- JESD-609 Kodu
- e3
- Genişlik
- 6.1mm
- Pin Sayısı
- 3
- Transition Frequency
- 100MHz
- Collector Base Voltage Vcbo
- 40V
- Element Configuration
- Single
- Yayın Yılı
- 2001
- Dc Current Gain Hfe Min Ic Vce
- 130 @ 500mA 3V
- Gain Bandwidth Product
- 100MHz
- Jesd30 Code
- R-PSSO-G2
- Current Collector Cutoff Max
- 1μA ICBO
- Emitter Base Voltage Vebo
- 5V
- Weight
- 260.37mg
- Collector Emitter Voltage Vceo
- 32V
- Frekans
- 100MHz
- Max Breakdown Voltage
- 80V
- Terminal Formu
- GULL WING
- Vce Saturation Max Ib Ic
- 800mV @ 200mA, 2A
- Contact Plating
- Tin
- Max Collector Current
- 2A
- Collectoremitter Breakdown Voltage
- 32V
- Number Of Elements
- 1
- Hfemin
- 130
- Radyasyon Dayanımı
- No
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