FDS9958-F085

Teknik Özellikler

Power Dissipation

2W

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

3ns

Continuous Drain Current Id

2.9A

Fet Type

2 P-Channel (Dual)

Parça Durumu

Active

Fet Feature

Logic Level Gate

Gate To Source Voltage Vgs

20V

Terminal Sayısı

8

Radyasyon Dayanımı

No

Pin Sayısı

8

Transistor Application

SWITCHING

Max Power Dissipation

900mW

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Turn On Delay Time

6 ns

Vgsth Max Id

3V @ 250μA

Pulsed Drain Currentmax Idm

12A

Montaj Tipi

Surface Mount

Weight

230.4mg

Terminal Formu

GULL WING

Element Configuration

Dual

Seri

Automotive, AEC-Q101, PowerTrench®

Input Capacitance Ciss Max Vds

1020pF @ 30V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Rds On Max Id Vgs

105m Ω @ 2.9A, 10V

Fabrika Tedarik Süresi

4 Weeks

Transistor Element Material

SILICON

Kurşunsuz Kodu

yes

Ambalaj

Tape & Reel (TR)

Drain To Source Breakdown Voltage

-60V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

6 ns

Operating Mode

ENHANCEMENT MODE

Avalanche Energy Rating Eas

54 mJ

Number Of Elements

2

Montaj

Surface Mount

Yayın Yılı

2017

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

60V