FDS6990AS

Teknik Özellikler

Vgsth Max Id

3V @ 1mA

Uzunluk

5mm

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Rise Time

8ns

Fet Feature

Logic Level Gate

Montaj Tipi

Surface Mount

Max Power Dissipation

900mW

Reach Svhc

No SVHC

Gate Charge Qg Max Vgs

14nC @ 5V

Turn On Delay Time

8 ns

Fabrika Tedarik Süresi

10 Weeks

Number Of Elements

2

Element Configuration

Dual

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Sayısı

8

Power Dissipation

2W

Seri

PowerTrench®, SyncFET™

Tepe Reflow Süresi (maks. sn)

30

Number Of Channels

2

Max Junction Temperature Tj

150°C

Rds On Max Id Vgs

22m Ω @ 7.5A, 10V

Drain To Source Breakdown Voltage

30V

Kurşunsuz

Lead Free

Montaj

Surface Mount

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Pin Sayısı

8

Tepe Reflow Sıcaklığı (°C)

260

Dual Supply Voltage

30V

Qualification Status

Not Qualified

Kurşunsuz Kodu

yes

Direnç

22mOhm

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

7.5A

Yükseklik

1.75mm

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Tin (Sn)

Ambalaj

Tape & Reel (TR)

Genişlik

4mm

Transistor Element Material

SILICON

Threshold Voltage

1.7V