FDS6975

Teknik Özellikler

Gate Charge Qg Max Vgs

20nC @ 5V

Montaj Tipi

Surface Mount

Max Power Dissipation

2W

Reach Svhc

No SVHC

Fabrika Tedarik Süresi

10 Weeks

Turn On Delay Time

13 ns

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Element Configuration

Dual

Power Max

900mW

Number Of Elements

2

Terminal Sayısı

8

Contact Plating

Tin

Voltage Rated Dc

-30V

Uzunluk

5mm

Vgsth Max Id

3V @ 250μA

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Fet Feature

Logic Level Gate

Rise Time

22ns

Drain To Source Voltage Vdss

30V

Kurşunsuz

Lead Free

Pin Sayısı

8

Montaj

Surface Mount

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Dual Supply Voltage

-30V

Kurşunsuz Kodu

yes

Power Dissipation

2W

Seri

PowerTrench®

Drain To Source Breakdown Voltage

-30V

Rds On Max Id Vgs

32m Ω @ 6A, 10V

Additional Feature

LOGIC LEVEL COMPATIBLE

Radyasyon Dayanımı

No

Genişlik

4mm

Ambalaj

Tape & Reel (TR)

Threshold Voltage

-1.7V

Transistor Element Material

SILICON

Yayın Yılı

2017

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Direnç

32mOhm