FDS4935

Teknik Özellikler

RoHS Durumu

RoHS Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Rise Time

10ns

Terminal Kaplaması

Tin (Sn)

Fet Feature

Logic Level Gate

Voltage Rated Dc

-30V

Vgsth Max Id

3V @ 250μA

Transistor Element Material

SILICON

Number Of Elements

2

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2000

Terminal Sayısı

8

Max Power Dissipation

900mW

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

21nC @ 5V

Ambalaj

Tape & Reel (TR)

Drain To Source Breakdown Voltage

-30V

Rds On Max Id Vgs

23m Ω @ 7A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Obsolete

Turn Off Delay Time

48 ns

Additional Feature

ESD PROTECTION

Input Capacitance Ciss Max Vds

1233pF @ 15V

Gerilim

30V

JESD-609 Kodu

e3

Seri

PowerTrench®

Power Dissipation

2W

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Type

2 P-Channel (Dual)

Akım Değeri

-7A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Qualification Status

Not Qualified

Kurşunsuz Kodu

yes

ECCN Kodu

EAR99

Continuous Drain Current Id

7A

Gate To Source Voltage Vgs

25V

Kurşunsuz

Lead Free