FDPC8012S

Teknik Özellikler

Vgsth Max Id

2.2V @ 250μA

Kılıf / Paket

8-PowerWDFN

Fet Type

2 N-Channel (Dual) Asymmetrical

Terminal Sayısı

8

Transistor Element Material

SILICON

Uzunluk

3.3mm

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Max Power Dissipation

2W

Terminal Kaplaması

Tin (Sn)

Yükseklik

725μm

Input Capacitance Ciss Max Vds

1075pF @ 13V

Genişlik

3.3mm

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

12V

Power Max

800mW 900mW

Fall Time Typ

3 ns

Parça Durumu

Active

Gate Charge Qg Max Vgs

8nC @ 4.5V

Fabrika Tedarik Süresi

12 Weeks

Rise Time

3ns

Current Continuous Drain Id25

13A 26A

Weight

192mg

Number Of Elements

2

Radyasyon Dayanımı

No

Rds On Max Id Vgs

7m Ω @ 12A, 4.5V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

ECCN Kodu

EAR99

Jedec95 Code

MO-240BA

Yayın Yılı

2010

Drain Currentmax Abs Id

13A

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Drainsource On Resistancemax

0.007Ohm

RoHS Durumu

ROHS3 Compliant

Kurşunsuz Kodu

yes

Turn Off Delay Time

34 ns

Fet Feature

Logic Level Gate

Montaj

Surface Mount