FDMS3669S

Teknik Özellikler

Yayın Yılı

2009

Drain To Source Breakdown Voltage

30V

Vgsth Max Id

2.7V @ 250μA

Max Power Dissipation

2.5W

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Seri

PowerTrench®

Weight

171mg

Kılıf / Paket

8-PowerTDFN

Gate Charge Qg Max Vgs

24nC @ 10V

Continuous Drain Current Id

60A

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

Tin (Sn)

Number Of Elements

2

Current Continuous Drain Id25

13A 18A

Input Capacitance Ciss Max Vds

1605pF @ 15V

Drainsource On Resistancemax

0.01Ohm

Radyasyon Dayanımı

No

Turn Off Delay Time

24 ns

Gate To Source Voltage Vgs

20V

Fet Type

2 N-Channel (Dual) Asymmetrical

Rise Time

3ns

Feedback Capmax Crss

55 pF

Uzunluk

5mm

Yükseklik

1.1mm

Montaj

Surface Mount

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

ECCN Kodu

EAR99

Genişlik

5.9mm

Power Max

1W

Fabrika Tedarik Süresi

13 Weeks

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Terminal Sayısı

6

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE