FDMS3622S

Teknik Özellikler

Fet Type

2 N-Channel (Dual) Asymmetrical

Drain To Source Breakdown Voltage

25V

Vgsth Max Id

2V @ 250μA

Max Power Dissipation

1W

Yükseklik

1.05mm

Uzunluk

5.1mm

Power Dissipation

2.5W

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Montaj

Surface Mount

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Seri

PowerTrench®

Weight

171mg

ECCN Kodu

EAR99

Kılıf / Paket

8-PowerTDFN

Gate Charge Qg Max Vgs

26nC @ 10V

Continuous Drain Current Id

34A

Genişlik

6.1mm

Element Configuration

Dual

Ambalaj

Tape & Reel (TR)

Fabrika Tedarik Süresi

13 Weeks

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Parça Durumu

Active

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

Terminal Kaplaması

Tin (Sn)

Number Of Elements

2

Terminal Sayısı

6

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Current Continuous Drain Id25

17.5A 34A

Drain Currentmax Abs Id

17.5A

Turn On Delay Time

7 ns

Input Capacitance Ciss Max Vds

1570pF @ 13V

Case Connection

DRAIN SOURCE

Fet Feature

Logic Level Gate

Drainsource On Resistancemax

0.005Ohm