FDMS3620S

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

18 Weeks

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Parça Durumu

Active

Gate Charge Qg Max Vgs

26nC @ 10V

Continuous Drain Current Id

38A

Genişlik

6.1mm

Element Configuration

Dual

Ambalaj

Tape & Reel (TR)

ECCN Kodu

EAR99

Kılıf / Paket

8-PowerTDFN

Seri

PowerTrench®

Weight

90mg

Montaj Tipi

Surface Mount

Montaj

Surface Mount

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Uzunluk

5.1mm

Yükseklik

1.05mm

Kurşunsuz

Lead Free

Max Power Dissipation

1W

Power Dissipation

2.5W

Fet Type

2 N-Channel (Dual) Asymmetrical

Drain To Source Breakdown Voltage

25V

Vgsth Max Id

2V @ 250μA

Gate To Source Voltage Vgs

12V

Jesd30 Code

R-PDSO-N6

Rds On Max Id Vgs

4.7m Ω @ 17.5A, 10V

Turn Off Delay Time

41 ns

Radyasyon Dayanımı

No

Temel Parça No

FDMS3620S

Drainsource On Resistancemax

0.0047Ohm

Pin Sayısı

8

Drain Currentmax Abs Id

17.5A

Input Capacitance Ciss Max Vds

1570pF @ 13V

Fet Feature

Logic Level Gate

Case Connection

DRAIN SOURCE

Operating Mode

ENHANCEMENT MODE