FDMS3604AS

Teknik Özellikler

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

RoHS Compliant

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Parça Durumu

Obsolete

Gate Charge Qg Max Vgs

29nC @ 10V

Continuous Drain Current Id

23A

Genişlik

6mm

Ambalaj

Tape & Reel (TR)

ECCN Kodu

EAR99

Kılıf / Paket

8-PowerTDFN

Seri

PowerTrench®

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Montaj

Surface Mount

Uzunluk

5mm

Yükseklik

1.05mm

Max Power Dissipation

1W

Power Dissipation

2.5W

Rise Time

4.8ns

Fet Type

2 N-Channel (Dual) Asymmetrical

Feedback Capmax Crss

75 pF

Drain To Source Breakdown Voltage

30V

Vgsth Max Id

2.7V @ 250μA

Nominal Vgs

2 V

Jesd30 Code

R-PDSO-N6

Gate To Source Voltage Vgs

20V

Rds On Max Id Vgs

8m Ω @ 13A, 10V

Turn Off Delay Time

31 ns

Radyasyon Dayanımı

No

Pin Sayısı

8

Fall Time Typ

3.4 ns

Drain Currentmax Abs Id

13A

Input Capacitance Ciss Max Vds

1695pF @ 15V

Case Connection

DRAIN SOURCE

Fet Feature

Logic Level Gate

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

13A 23A

Terminal Sayısı

6