FDMQ86530L

Teknik Özellikler

Pin Sayısı

12

Pulsed Drain Currentmax Idm

50A

Fall Time Typ

2.8 ns

Rds On Max Id Vgs

17.5m Ω @ 8A, 10V

Transistor Application

SWITCHING

Terminal Sayısı

12

Threshold Voltage

1.8V

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Drain Currentmax Abs Id

8A

Turn On Delay Time

8.8 ns

Case Connection

DRAIN SOURCE

Fet Feature

Logic Level Gate

ECCN Kodu

EAR99

Genişlik

4.5mm

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fabrika Tedarik Süresi

8 Weeks

Parça Durumu

Active

Max Junction Temperature Tj

150°C

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

3.8ns

Fet Type

4 N-Channel (H-Bridge)

Feedback Capmax Crss

15 pF

Manufacturer Package Identifier

511CR

Uzunluk

5mm

Yükseklik

800μm

Kurşunsuz

Lead Free

Montaj

Surface Mount

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Turn On Timemax Ton

28ns

Drainsource On Resistancemax

0.0175Ohm

Radyasyon Dayanımı

No

Turn Off Delay Time

22 ns

Gate To Source Voltage Vgs

20V

Terminal Kaplaması

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Number Of Elements

4

Terminal Pozisyonu

DUAL

Input Capacitance Ciss Max Vds

2295pF @ 30V

Kılıf / Paket

12-WDFN Exposed Pad