FDMQ8203

Teknik Özellikler

Drainsource On Resistancemax

0.11Ohm

Radyasyon Dayanımı

No

Gate To Source Voltage Vgs

20V

Number Of Elements

4

Terminal Kaplaması

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Current Continuous Drain Id25

3.4A 2.6A

Input Capacitance Ciss Max Vds

210pF @ 50V

Kılıf / Paket

12-WDFN Exposed Pad

Continuous Drain Current Id

2.6A

Gate Charge Qg Max Vgs

5nC @ 10V

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Drain To Source Breakdown Voltage

-80V

Nominal Vgs

3 V

Vgsth Max Id

4V @ 250μA

Max Power Dissipation

2.5W

Power Dissipation

2.5W

Montaj Tipi

Surface Mount

JESD-609 Kodu

e4

Weight

210mg

Seri

GreenBridge™ PowerTrench®

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Reach Svhc

No SVHC

Drain To Source Voltage Vdss

100V 80V

Pin Sayısı

12

Fall Time Typ

2.7 ns

Temel Parça No

FDMQ8203

Rds On Max Id Vgs

110m Ω @ 3A, 10V

Transistor Application

SWITCHING

Terminal Sayısı

12

Çalışma Sıcaklığı

-55°C~150°C TJ

Threshold Voltage

3V

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Abs Id

6A

Fet Feature

Logic Level Gate

Case Connection

DRAIN

ECCN Kodu

EAR99

Element Configuration

Dual