FDMD82100L

Teknik Özellikler

Operating Mode

ENHANCEMENT MODE

Weight

82.3188mg

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Max Power Dissipation

1W

Feedback Capmax Crss

15 pF

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

24nC @ 10V

Drain To Source Voltage Vdss

100V

Drainsource On Resistancemax

0.0195Ohm

Drain To Source Breakdown Voltage

100V

RoHS Durumu

ROHS3 Compliant

Rise Time

2.8ns

Input Capacitance Ciss Max Vds

1585pF @ 50V

Continuous Drain Current Id

7A

Number Of Channels

2

Fet Type

2 N-Channel (Dual)

Drain Currentmax Abs Id

7A

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

260

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fet Feature

Logic Level Gate

Terminal Formu

NO LEAD

Vgsth Max Id

3V @ 250μA

Turn Off Delay Time

21 ns

Kılıf / Paket

12-PowerWDFN

REACH Uyumluluk Kodu

not_compliant

JESD-609 Kodu

e3

Pin Sayısı

12

Parça Durumu

Active

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Turn On Delay Time

7.9 ns

Terminal Sayısı

12

Fall Time Typ

2.9 ns

Terminal Kaplaması

Tin (Sn)

Fabrika Tedarik Süresi

12 Weeks

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Elements

2