FDG6335N

Teknik Özellikler

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Threshold Voltage

1.1V

Ambalaj

Tape & Reel (TR)

Genişlik

1.25mm

Radyasyon Dayanımı

No

Çalışma Sıcaklığı

-55°C~150°C TJ

Yükseklik

1.1mm

RoHS Durumu

ROHS3 Compliant

Direnç

300MOhm

Drain Currentmax Abs Id

0.7A

ECCN Kodu

EAR99

Continuous Drain Current Id

700mA

Fall Time Typ

7 ns

Gate To Source Voltage Vgs

12V

Input Capacitance Ciss Max Vds

113pF @ 10V

Turn Off Delay Time

9 ns

JESD-609 Kodu

e3

Parça Durumu

Active

Weight

28mg

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Type

2 N-Channel (Dual)

Akım Değeri

700mA

Contact Plating

Tin

Terminal Sayısı

6

Number Of Elements

2

Element Configuration

Dual

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time

5 ns

Fabrika Tedarik Süresi

10 Weeks

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

Max Power Dissipation

300mW

Gate Charge Qg Max Vgs

1.4nC @ 4.5V

Rise Time

7ns

Fet Feature

Logic Level Gate

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Vgsth Max Id

1.5V @ 250μA