FDG6321C

Teknik Özellikler

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Rise Time

8ns

Fet Feature

Logic Level Gate

Vgsth Max Id

1.5V @ 250μA

Element Configuration

Dual

Number Of Elements

2

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Contact Plating

Tin

Terminal Sayısı

6

Reach Svhc

No SVHC

Max Power Dissipation

300mW

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

2.3nC @ 4.5V

Fabrika Tedarik Süresi

10 Weeks

Drain To Source Breakdown Voltage

25V

Rds On Max Id Vgs

450m Ω @ 500mA, 4.5V

Max Junction Temperature Tj

150°C

Additional Feature

LOGIC LEVEL COMPATIBLE

Power Dissipation

300mW

Kurşunsuz Kodu

yes

Kurşunsuz

Lead Free

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Montaj

Surface Mount

Pin Sayısı

6

Current Continuous Drain Id25

500mA 410mA

Yükseklik

1.1mm

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Direnç

450mOhm

Transistor Element Material

SILICON

Threshold Voltage

800mV

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Yayın Yılı

2017

Ambalaj

Tape & Reel (TR)

Radyasyon Dayanımı

No

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

28mg