FDG6320C

Teknik Özellikler

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Fet Feature

Logic Level Gate

Rise Time

8ns

Uzunluk

2mm

Vgsth Max Id

1.5V @ 250μA

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Elements

2

Element Configuration

Dual

Terminal Sayısı

6

Contact Plating

Tin

Gate Charge Qg Max Vgs

0.4nC @ 4.5V

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

Max Power Dissipation

300mW

Fabrika Tedarik Süresi

10 Weeks

Turn On Delay Time

5 ns

Rds On Max Id Vgs

4 Ω @ 220mA, 4.5V

Drain To Source Breakdown Voltage

25V

Max Junction Temperature Tj

150°C

Additional Feature

LOGIC LEVEL COMPATIBLE

Power Dissipation

300mW

Dual Supply Voltage

25V

Kurşunsuz Kodu

yes

Kurşunsuz

Lead Free

Pin Sayısı

6

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Montaj

Surface Mount

Current Continuous Drain Id25

220mA 140mA

Yükseklik

1.1mm

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Direnç

4Ohm

Threshold Voltage

850mV

Transistor Element Material

SILICON

Yayın Yılı

2017

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Radyasyon Dayanımı

No

Ambalaj

Tape & Reel (TR)