FDG6318P

Teknik Özellikler

Çalışma Sıcaklığı

-55°C~150°C TJ

RoHS Durumu

RoHS Compliant

Yükseklik

1mm

Direnç

780MOhm

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Yayın Yılı

2003

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Genişlik

1.25mm

Radyasyon Dayanımı

No

Input Capacitance Ciss Max Vds

83pF @ 10V

Turn Off Delay Time

6 ns

JESD-609 Kodu

e3

Weight

28mg

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Obsolete

Fet Type

2 P-Channel (Dual)

Akım Değeri

-500mA

ECCN Kodu

EAR99

Continuous Drain Current Id

500mA

Drain Currentmax Abs Id

0.5A

Fall Time Typ

12 ns

Gate To Source Voltage Vgs

12V

Rise Time

12ns

Fet Feature

Logic Level Gate

Lifecycle Status

LAST SHIPMENTS (Last Updated: 2 days ago)

Vgsth Max Id

1.5V @ 250μA

Uzunluk

2mm

Voltage Rated Dc

-20V

Contact Plating

Tin

Terminal Sayısı

6

Number Of Elements

2

Element Configuration

Dual

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time

6 ns

Montaj Tipi

Surface Mount

Max Power Dissipation

300mW

Gate Charge Qg Max Vgs

1.2nC @ 4.5V