FDG6304P

Teknik Özellikler

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

62pF @ 10V

Turn Off Delay Time

55 ns

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

28mg

Nominal Vgs

-820 mV

Akım Değeri

-410mA

Fet Type

2 P-Channel (Dual)

Terminal

SMD/SMT

Drain Currentmax Abs Id

0.41A

Continuous Drain Current Id

-410mA

ECCN Kodu

EAR99

Fall Time Typ

8 ns

Gate To Source Voltage Vgs

-8V

Çalışma Sıcaklığı

-55°C~150°C TJ

Current Continuous Drain Id25

410mA

RoHS Durumu

ROHS3 Compliant

Direnç

1.1Ohm

Yayın Yılı

1999

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Threshold Voltage

-820mV

Transistor Element Material

SILICON

Radyasyon Dayanımı

No

Ambalaj

Tape & Reel (TR)

Additional Feature

LOGIC LEVEL COMPATIBLE

Drain To Source Breakdown Voltage

-25V

Rds On Max Id Vgs

1.1 Ω @ 410mA, 4.5V

Power Dissipation

300mW

Kurşunsuz Kodu

yes

Dual Supply Voltage

-25V

Pin Sayısı

6

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Montaj

Surface Mount

Kurşunsuz

Lead Free

Drain To Source Voltage Vdss

25V

Fet Feature

Logic Level Gate

Rise Time

8ns