FDG6303N

Teknik Özellikler

Fabrika Tedarik Süresi

10 Weeks

Turn On Delay Time

3 ns

Gate Charge Qg Max Vgs

2.3nC @ 4.5V

Reach Svhc

No SVHC

Max Power Dissipation

300mW

Montaj Tipi

Surface Mount

Terminal Sayısı

6

Contact Plating

Tin

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Element Configuration

Dual

Number Of Elements

2

Uzunluk

2mm

Vgsth Max Id

1.5V @ 250μA

Voltage Rated Dc

25V

Fet Feature

Logic Level Gate

Rise Time

8.5ns

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Pin Sayısı

6

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Montaj

Surface Mount

Kurşunsuz

Lead Free

Kurşunsuz Kodu

yes

Dual Supply Voltage

25V

Power Dissipation

300mW

Additional Feature

LOGIC LEVEL COMPATIBLE

Rds On Max Id Vgs

450m Ω @ 500mA, 4.5V

Drain To Source Breakdown Voltage

25V

Radyasyon Dayanımı

No

Ambalaj

Tape & Reel (TR)

Genişlik

1.25mm

Yayın Yılı

1999

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Threshold Voltage

800mV

Transistor Element Material

SILICON

Direnç

450mOhm

Çalışma Sıcaklığı

-55°C~150°C TJ

Yükseklik

1mm

RoHS Durumu

ROHS3 Compliant