FDG6301N-F085

Teknik Özellikler

Gate Charge Qg Max Vgs

0.4nC @ 4.5V

Max Power Dissipation

300mW

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

42 Weeks

Radyasyon Dayanımı

No

Ambalaj

Tape & Reel (TR)

Turn On Delay Time

5 ns

Threshold Voltage

850mV

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

Number Of Elements

2

Element Configuration

Dual

Terminal Sayısı

6

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Vgsth Max Id

1.5V @ 250μA

RoHS Durumu

ROHS3 Compliant

Lifecycle Status

ACTIVE (Last Updated: 6 days ago)

Yükseklik

1.1mm

Fet Feature

Logic Level Gate

Drainsource On Resistancemax

4Ohm

Rise Time

4.5ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Voltage Vdss

25V

Gate To Source Voltage Vgs

8V

Pin Sayısı

6

Fall Time Typ

3.2 ns

Montaj

Surface Mount

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Continuous Drain Current Id

220mA

Kurşunsuz Kodu

yes

Power Dissipation

300mW

Seri

Automotive, AEC-Q101

Fet Type

2 N-Channel (Dual)

Weight

28mg

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Max Junction Temperature Tj

150°C

Rds On Max Id Vgs

4 Ω @ 220mA, 4.5V